| 摘要 |
PURPOSE:To eliminate pattern distortion and to improve reflectance at a patterned reflection part by forming a single crystalline film having X-ray reflectivity on a substrate surface having X-ray transmitting properties which consists of single crystal. CONSTITUTION:For example, a single crystalline film 12 which consists of a tungsten single crystalline film, etc., of about 1mum in thickness is formed heterogeneously by epitaxial method on a surface of a single crystalline substrate 11 which consists of a silicon single crystal, etc., of about 1mm in thickness having 111 crystal surface. A single crystalline film 12 is formed by photoetching leaving a patterned single crystalline film 13. Besides single crystalline silicon, other single crystalline material having X-ray transmitting properties such as crystal or sapphire can be used for the single crystalline substrate 11; and besides a tungsten single crystalline film, patterned single crystalline film consisting other X-ray reflecting material such as a single crystalline film of gold or zinc and molybdenum single crystalline film can be used for the patterned single crystalline film 13. A mask for reflection type X-ray exposed can be provided in this way, which does not develop pattern distortion and can carry out projection. |
