| 摘要 |
PURPOSE:To improve the adhesive strength and heat dissipation property of a semiconductor chip by a method wherein a metal film is formed on the surface on the opposite side to the surface, on which an integrated circuit is formed, of a semiconductor substrate and the side surfaces, which are linked with this surface, of the substrate. CONSTITUTION:An integrated circuit is formed on the surface of a semiconductor chip 1 and a metal film 2 consisting of gold Au or the like is continuously formed on side surfaces 1b, 1c, 1d and 1e, which are linked to the surface 1a and rear of the chip 1, by a technique of deposition or the like. With the film 2 formed on the whole back surface of the chip 1, the film 2 has only to be formed on the whole side surfaces or part of the whole side surfaces. In case the film 2 is formed of two kinds or more of metals as a multilayer film, it is desirable that the film 2 is continuously formed ranging from the back surface of the chip 1 to the side surfaces of the chip 1 in every layer. |
