INDIUM OXIDE-TIN OXIDE SINTERED BODY AND PRODUCTION THEREFOR

摘要

PURPOSE:To vapor-deposit an indium oxide-tin oxide (ITO) film having low specific resistance value in the conditions low in the temp. of a base plate and to form an ITO sintered body high in thermal shock resistance by limiting the surface resistance value and mean crystal particle diameter of a sintered body at specified value. CONSTITUTION:An indium oxide-tin oxide (ITO) sintered body consists of indium, tin and oxygen and is utilized for a tablet for vapor deposition or a target material for sputtering and has surface resistance value less than 50mOMEGA/cm<2> and >=7mum mean crystal particle diameter. This ITO sintered body is obtained by the method described hereunder. In other words, a binder is added to indium oxide powder which is free from flocculating property and has <=0.1mum mean particle diameter or indium oxide-tin oxide powder and tin oxide powder or to only indium oxide-tin oxide powder which is free from flocculating property and has <=0.1mum mean particle diameter. These are mixed and molded and thereafter the molded body is sintered at >=1500 deg.C in the oxygen atmosphere.