| 摘要 |
<p>PURPOSE:To increase the dry etching resistance of the resist and to allow the formation of the thin resist and to attain the formation of high-accuracy patterns by adopting a titanium oxide as a resist. CONSTITUTION:The titanium oxide resist 3 is formed by an RF magnetron sputtering device on an Si single crystal substrate 1 of (n) type having a face direction 100. The ratio of oxygen/titanium is set at <=2 in this case. Since the titanium oxide resist 3 is a positive resist, the part 3a denatured by ion implantation is reactively dissolved in an aq. HF soln. and is thereby removed form the surface of the substrate 1, by which the titanium oxide resist 3 of the prescribed patterns is eventually formed on the substrate 1. Thus, the titanium oxide resist 3 has the extremely high resistance to dry etching and allows the etching of a high aspect ratio with the thin resist. The high-accuracy patterns are formed.</p> |
