| 摘要 |
PURPOSE:To provide compatibility between hardness and high heat conductivity, to possess superior cutting performance, and to make it possible to use a bite cheaply and effectively by using polycrystal silicon carbide manufactured by chemical gaseous phase growing method on the bite edge. CONSTITUTION:A graphite vessel 13 housing raw material 12 formed by mixing SiO2 with graphite in 1:1 rate is arranged on the bottom part of a reaction vessel 11, base materials 14 consisting of graphite are supported and arranged with a supporting bed or a supporting bar 15 at intervals therefrom. Next, the inside of the reaction vessel 11 is reduced in its pressure to the degree of 1.0-5Torr, and the temperature in a raw material chamber 12a housing the raw materials 12 is kept to about 1700-2000 deg.C, and that of a deposition chamber 14a housing the base materials 14 to a temperature level at which alpha type or beta type SiC is deposited. In this case, the base materials 14 are positioned in a lower part and deposition is performed in high temperature for the purpose of obtaining alpha type crystal, and the base materials are positioned in an upper part designated by a two-dot chain line and deposition temperature is made to become a little lower for beta type. Thereby, polycrystal SiC can be deposited from the raw material inside the raw material chamber 12a to the surfaces of the base materials 14. |
