| 摘要 |
<p>PURPOSE:To prevent the application of an excessive reverse direction voltage to a bipolar transistor by allowing a paired transistor interposed between a common data line and the bipolar transistor to be a conductive state at one side of it and to be a non-conductive state at the other side at the time of writing. CONSTITUTION:Gates of (p) channel MOS transistors (PMOS) 1a, 1b are controlled by the output of NOR gates 14a, 14b for the writing circuits, at the readout time both sides are conductive states, at the writing time the one side corresponding to the common data lines 26a, 26b at the side whose level is not lowered goes to the conductive state, and simultaneously the other side corresponding to the common data lines 26a, 26b at the side whose level is lowered goes to the non conductive state, and the base of the bipolar transistors 5a, 5b connected to the common data line in the side whose level is lowered is clamped to the prescribed voltage through diodes 2a, 2b. Consequently, while preventing the excessive reverse direction voltage between the base and the emitter of the bipolar transistor constituting a sense amplifire SA, the writing is performed.</p> |
