发明名称 |
Semiconductor memory having stacked capacitor |
摘要 |
A megabit dynamic random access memory realizing high integration and high reliability is disclosed. The need for an allowance for photomask alignment which is carried out to produce a stacked capacitor memory cell is eliminated. The plate electrode of each memory cell is isolated from the corresponding data line in a memory array by means of an insulating film which is self-alignedly provided around the plate electrode.
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申请公布号 |
US5012310(A) |
申请公布日期 |
1991.04.30 |
申请号 |
US19900566315 |
申请日期 |
1990.08.13 |
申请人 |
HITACHI, LTD. |
发明人 |
KIMURA, SHINICHIRO;KAWAMOTO, YOSHIFUMI;KAGA, TORU;SUNAMI, HIDEO |
分类号 |
H01L27/10;H01L21/8242;H01L27/108 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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