MANUFACTURE OF MASK FOR X-RAY RADIATION

摘要

PURPOSE:To reduce inner stress and improve the accuracy of a pattern position by using a sputtering device for an X-ray transmitting thin film formed on a substrate for forming an X-ray absorbing material region of high melting point nitride followed by heating for prescribed time. CONSTITUTION:An SiN film 2 as an X-ray transmitting thin film is formed on both sides of an Si wafer substrate 1, while a protective film 3 is formed on one face side of these both side SiN film 2 by means of etching removal of a useless part of the SiN film 2 having a photoresist pattern as a mask. A titanium.tungsten nitriding film 4 as an X-ray absorbing material region is formed on the SiN film 2 by a reaction sputtering method for performing heat treatment for a prescribed time in a nitrogen gas atmosphere. Next, the titanium.tungsten nitriding film 4 is patterned having a desired resist pattern 55 as a mask by reaction ion etching method in order to form an X-ray absorbing pattern 6.