| 摘要 |
<p>A pattern formation process uses a positive-working resist material of the formula (I): <CHEM> in which R<1> and R<2> may be the same or different, and each represents a substituted or unsubstituted lower alkyl group, X represents a halogen atom, and m and n each is larger than 0 and smaller than 100. Exposure is followed by development of the selectively exposed resit material with xylene for 10 to 20 minutes, or with other solvent(s). This process yields fine resist patterns having an increased sensitivity and excellent resolution without a reduction of the layer thickness in an unexposed area of the resist and without resist residues in an exposed area of the same.</p> |
