| 摘要 |
PURPOSE:To obtain a high-luminous-efficiency semiconductor light emitting element having an InGaAsP light emitting layer, the light output of which is not saturated to high output, by sandwiching said p-type InGaAsP light emitting layer between an n-type InP first clad layer and a p-type InAlAs second clad layer. CONSTITUTION:An n-InP first clad layer 11, a p-InGaAsP light emitting layer 12, and a p-InAlAs second clad layer 13 are grown on an n-InP substrate 10 by the vapor growth method or molecular beam growth method. A contact region 15 of high p-type impurity concentration is formed by the Cd/Zn selective impurity diffusion method with a dielectric mask 14 and then an AuZn p- electrode 16 is formed. The rear of the n-InP substrate 10 is abraded to the thickness of about 100mum and a dielectric nonreflecting film 17 and n-electrodes 18 are formed on the rear to complete a semiconductor light emitting element. |
