| 摘要 |
PURPOSE:To reduce in size a memory cell and to decrease a parasitic capacity by separating a memory cell from a semiconductor substrate by an insulating film. CONSTITUTION:A p<+> type semiconductor region 3 is formed vertically substantially at the center of an oxide film 2 on a p<-> type semiconductor substrate 1, n<-> type semiconductor regions 4, 5 are formed at the left and right side of the region, and p<-> type semiconductor regions 6, 7 are formed outside the regions 4, 5. N<+> type semiconductor regions 10, 11 are formed in the surface regions of the regions 6, 7, and n<+> type semiconductor regions 15, 16 are so formed in the lower regions of the regions 6, 7 as to be brought into contact with the regions 4, 5, respectively. pnp load Trs Q1', Q2 are formed of the regions 3, 4, 6, (3, 5, 7), and a multi-emitter npn drive Trs Q3', Q4 are formed of the regions 4, 6, 8, 10 (5, 7, 9, 11). |
