HALBLEITERSCHALTELEMENT

摘要

The invention relates to a semiconductor component of a first n<+>-doped layer (1), a second p-doped layer (2), a third n<->-doped layer (3) and a fourth p-doped layer (4). Layer (1) forms a cathode emitter and layer (4) forms an anode with suitable metal coatings (6 and 7). According to the invention, the semiconductor component triggers a flip-flop cycle since two central layers (second layer 2 and third layer 3) are given such a thickness and doping that the space charge region on the application of a voltage to the component extends towards the next pn junction (between the third and fourth layers 3 and 4 and/or the first and second layers (1 and 2) in such a way that the corresponding current amplification alpha (alphapnp and/or alphanpn) increases. Alternatively, the flip-flop cycle may also be triggered when the space charge region reaches the next pn junction. The component of the invention exhibits small variations in the parameters UBO and IH especially if n-doped Si material (rho = 100 ohm.cm or more) is used for the central layer (3). The parameters UBO, IBO and IH may be adjusted largely independently with the component of the invention. With the components it is possible to make series circuits of many components and in particular it is possible to produce component stacks for very high voltages which are especially suitable as fast, passive high-voltage switches to steepen the high-voltage pulses in the secondary circuit of an ignition system.