| 摘要 |
PURPOSE:To sharply reduce a crack of an insulating film and to enhance reliability of a bump electrode type semiconductor device by a method wherein a size of a contact part of a metal part with a bump electrode coming into contact with the insulating film on the metal film is made larger than a pattern size of the metal film and the metal film and the insulating film on the metal film are included under the bump electrode. CONSTITUTION:A flat metal film 2 is covered with an insulating film 3; a bump electrode 5 which is connected to the metal film 2 through its opening part is formed. A size bx of a contact part of the metal film 2 with the bump electrode 5 coming into contact with the insulating film 3 on it is made larger than a pattern size ax of the metal film 2; the metal film 2 and the insulating film 3 on it are included under the bump electrode. By this constitution, the ductile metal film (aluminum film) 2 does not exist around the contact part A, and a shearing stress is not produced. As a result, a crack of the insulating film 3 is reduced, and reliability of a semiconductor device can be enhanced. |
