| 摘要 |
PURPOSE:To provide a positive type photoresist compsn. applicable to deep UV lithography and having superior sensitivity, resolution and pattern contrast by incorporating an alkali-soluble resin and a photosensitive solubilization inhibitor having a specified structure. CONSTITUTION:When a resist film is formed with a positive type photoresist compsn. contg. a photosensitive solubilization inhibitor represented by general formula I and an alkali-soluble resin, light can be allowed to effectively reach the lower part of the resist film. The compd. represented by the formula I well absorbs light having about 248nm wavelength and forms ketene by photochemical degradation. The formed ketene is quickly converted into a carboxyl group by a reaction with water in the resist film or in the air and brings the resist film into a considerable change of polarity at the exposed part. The solubility of the resist film in an aq. alkali soln. is increased at the exposed part and a positive pattern can be obtd. by subsequent alkali development. The alkali-soluble resin is preferably p-cresol-novolak resin, poly(p- hydroxystyrene) or a styrene-maleic anhydride copolymer. |
