| 摘要 |
PURPOSE:To obtain a single crystal having small resistivity fluctuation by providing a hood for separating a polycrystal rod from a doping gas atmosphere except for the molten part during the growth of a single crystal rod using a floating zone process and introducing inert gas into the hood. CONSTITUTION:Either one of a polycrystal rod 12a and a seed crystal 12b is supported by an upper shaft 11c in a chamber 11 and the other crystal is supported by a lower shaft 11b. The polycrystal rod 12a is heated and melted by a high-frequency coil 13 and, at the same time, the molten zone is transferred along the axial line toward the polycrystal side while rotating the polycrystal rod 12a and the seed crystal 12b. A doping gas is introduced into the chamber 11 to effect the growth of a single crystal doped with an impurity. In the above case, a hood 14 is placed in the chamber 11 and an inert gas such as Ar gas is introduced into the hood 14 to separate the polycrystal rod 12a from the doping gas atmosphere except for the molten part of the rod. The contamination of the polycrystal rod 12a with impurities can be prevented by this process. |
