INPUT PROTECTION CIRCUIT FOR MOS DEVICE,申请号EP19890113789-传众专利搜索

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发明名称	INPUT PROTECTION CIRCUIT FOR MOS DEVICE
摘要
申请公布号	EP0352769(A3)	申请公布日期	1991.03.20
申请号	EP19890113789	申请日期	1989.07.26
申请人	KABUSHIKI KAISHA TOSHIBA;TOSHIBA MICRO-ELECTRONICS CORPORATION	发明人	OKADA, YOSHIO C/O INTELLECTUAL PROPERTY DIVISION;IMADA, SADAO C/O INTELLECTUAL PROPERTY DIVISION;SHIMIZU, MITSURU C/OINTELLECTUAL PROPERTY DIVISION
分类号	H01L29/78;H01L27/02;H01L27/06;H03K17/0812;H03K19/003;(IPC1-7):H03K17/08	主分类号	H01L29/78
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