| 摘要 |
PURPOSE:To manufacture a uniform light emitting unit with satisfactory controllability by providing a lower breakdown voltage region than that of other part on a part of a flat part of a P-N junction in a semiconductor light emitting element using electron avalanche breakdown. CONSTITUTION:A semiconductor light emitting element in which P-type semiconductor layer is so provided as to form a planar P-N junction on the surface of N-type semiconductor, a reverse bias is applied to the P-N junction to generate electron avalanche breakdown to emit a light, a high concentration N-type region 3 different from regions is provided on the N-type semiconductor. Thus, a high concentration region is provided to form a high electric field, electron- hole pair generating efficiency is enhanced to increase the probability of light emission to control intensity and large energy is applied to the electron-hole pairs to emit a light having larger energy than a pad gap Eg. |
