THIN FILM CONSISTING OF SIC AND SI3N4, PRODUCTION THEREOF AND MASK FOR X-RAY LITHOGRAPHY

摘要

PURPOSE:To produce a thin film having superior visible light transmissivity by carrying out film formation on a substrate by sputtering with a target consisting of SiC and Si3N4 in a specified molar ratio. CONSTITUTION:A target consisting of SiC and Si3N4 in (95:5)-(30:70) molar ratio is used. Electric power is supplied to the target by about >=5W/cm<2> under about 1X10<-2>-1X10<-1>Torr pressure and film formation is carried out on a substrate at about 100-1,000 deg.C by magnetron sputtering or other method. A thin film having 1X10<8>-1X10<10> dyne/cm<2> tensile stress, high energy beam and chemical resistances is obtd. This thin film is suitable for a mask for X-ray lithography.