| 摘要 |
PURPOSE:To secure a good connection state for a long period of time by a method wherein a metal film identical with a film for a light-shielding film use is formed in such a way that it covers individually an opening and makes a conductive connection with a connecting film in the opening, and a connecting pad is formed of the part other than the overlapping part of the metal film with the connecting film in the opening part. CONSTITUTION:A connecting film 3 is applied on an oxide film 2, which covers a semiconductor substrate 1, and the end part of the film 3 is formed into a pattern swelled at a pad connecting part 3a. A protective film 4 is grown on the film 3, an opening 4a is formed in a place to be provided with a connecting pad and the connecting part 3a of the film 3 is made to expose in part of the opening 4a. Then, an Al film is applied as a film for a light- shielding film 5 use and an etching is performed to form the film 5 into a large pattern, which covers the upper part of circuit parts 13, and at the same time, a metal film 6 consisting of an Al film is formed into a pattern to cover individually the opening 4a. Thereby, the connecting pad 11 is formed at the part other than the overlapping part of the film 6 with the connecting part 3a in the opening 4a. |
