发明名称 |
SEMICONDUCTOR POWER MODULE |
摘要 |
<p>A power semiconductor module includes a multi-layered substrate formed of a first ceramic bottom plate, at least one second ceramic plate disposed above and parallel to the first ceramic bottom plate, a metal foil in the form of a textured metallization located between and directly bonded to the ceramic plates, the second ceramic plate having cutouts formed therein, and assembly elements soldered in the cutouts.</p> |
申请公布号 |
EP0221399(B1) |
申请公布日期 |
1991.03.06 |
申请号 |
EP19860114083 |
申请日期 |
1986.10.10 |
申请人 |
ASEA BROWN BOVERI AKTIENGESELLSCHAFT |
发明人 |
GOBRECHT, JENS, DR. DIPL.-ING.;BAYERER, REINHOLD, DR. DIPL.-ING. |
分类号 |
H01L23/12;H01L23/538;H01L25/07;H01L25/16;H01L25/18;H05K1/18 |
主分类号 |
H01L23/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|