发明名称 SEMICONDUCTOR POWER MODULE
摘要 <p>A power semiconductor module includes a multi-layered substrate formed of a first ceramic bottom plate, at least one second ceramic plate disposed above and parallel to the first ceramic bottom plate, a metal foil in the form of a textured metallization located between and directly bonded to the ceramic plates, the second ceramic plate having cutouts formed therein, and assembly elements soldered in the cutouts.</p>
申请公布号 EP0221399(B1) 申请公布日期 1991.03.06
申请号 EP19860114083 申请日期 1986.10.10
申请人 ASEA BROWN BOVERI AKTIENGESELLSCHAFT 发明人 GOBRECHT, JENS, DR. DIPL.-ING.;BAYERER, REINHOLD, DR. DIPL.-ING.
分类号 H01L23/12;H01L23/538;H01L25/07;H01L25/16;H01L25/18;H05K1/18 主分类号 H01L23/12
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