发明名称 Method of improving cleaving of diode arrays
摘要 A relatively wide scribing channel is provided between the ends of each adjacent pair of diode array areas on a wafer to expose the epitaxial layer of the wafer. A scribing groove is then scribed in the scribing channel to define a cleavage line along which the array areas are separated.
申请公布号 US4997793(A) 申请公布日期 1991.03.05
申请号 US19890439920 申请日期 1989.11.21
申请人 EASTMAN KODAK COMPANY 发明人 MCCLURG, SCOTT D.
分类号 H01L33/00;H01L21/301;H01L21/304 主分类号 H01L33/00
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