| 摘要 |
<p>A MISFET of a structure in which each of the source and the drain has a low-concentration region and a high-concentration region and a method of producing the same. In a MOS transistor having an LDD (lightly doped drain) structure, the gate is expanded up to the upper portion of the low-concentration region of each of the source and drain. This makes it possible to prevent the drain resistance from fluctuating by the generation of hot electrons.</p> |
