| 摘要 |
<p>A process of producing an SOI-structured semiconductor device substrate, comprising bonding polished surfaces of two Si-monocrystal wafers (1a, 1b), at least one of which surfaces bears an oxide film (1c), and uniformly eliminating part of the thickness of one of the wafers (1b) parallel to the polished surface, characterised by: reducing the diameter of said one wafer (1b) so that it is slightly smaller than that of the other wafer (1a), thereby exposing an unbonded uniform annular periphery on the surface of said other wafer (1a); forming, on the surface of said one wafer (1b) and said periphery, a material (1d) providing greater resistance to polishing than said one wafer (1b); and polishing said one wafer (1b). Even when only a few mu m thick, the material, e.g. SiO2, provides accurate thickness control of the thin film, and thus acts as a polishing guard.</p> |
