| 摘要 |
PURPOSE:To easily form a large capacity memory by forming a diode perpendicularly of a film face in a laminated layer configuration of an amorphous semiconductor thin film, and forming electrodes interposed at both sides of the film of a plurality of perpendicular electrodes. CONSTITUTION:An Al thin film is formed on a glass insulating board 1 by sputtering, and a plurality of electrodes 2 are formed by photoetching. Hydrogenated amorphous Si n-type layer 3, an i-type layer 4 and a p-type layer 5 are sequentially laminated on the electrodes 2 by plasma CVD to form a n-i-p type diode. In this case, the layers 3, 5 are formed of high resistance thin film for preventing a crosstalk of a leakage of a lateral current at the time of forming a memory, and the layer 4 is formed in a predetermined thickness to eliminate high breakdown voltage. A plurality of electrodes 6 are formed in a direction perpendicular to the electrodes 2 in the same method as that of the electrodes 2 on the amorphous layer. Thus, a large capacity memory is easily obtained. |
