发明名称 |
Semiconductor light-emitting device. |
摘要 |
<p>A semiconductor light emitting device comprises a substrate, an n-type semiconductor layer formed on the substrate, a p-type semiconductor layer formed on a portion of a surface of the n-type semiconductor layer, an electrode for applying a reverse biasing voltage to the PN junction to cause an avalanche breakdown and an area formed in a portion of the PN junction. The p-type semiconductor layers forms a planar type PN junction with the n-type semiconductor layer. The area formed in a portion of the PN junction has a lower break down voltage than that of other area.</p> |
申请公布号 |
EP0411612(A2) |
申请公布日期 |
1991.02.06 |
申请号 |
EP19900114775 |
申请日期 |
1990.08.01 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
TSUKAMOTO, TAKEO C/O CANON KABUSHIKI KAISHA;OKUNUKI, MASAHIKO, C/O CANON KABUSHIKI KAISHA |
分类号 |
H01L33/00;H01L33/24;H01L33/30 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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