| 摘要 |
PURPOSE:To obtain a compact configuration and to prevent the decrease in hEF, by depositing an oxide film having a thick part on a substrate so as to surround a thin part, introducing impurities through said oxide film, and forming base and emitter regions. CONSTITUTION:A thick oxide film 2 having the thickness of 1,100Angstrom is formed on an N<-> type Si substrate 1. A part of it is etched and the thin oxide film 5 having the thickness of 500Angstrom is formed. Through said oxide film having a step, boron ions are implanted and diffused, and a base diffused layer is formed so that a shallow P type layer 5a is formed at the part of the thick oxide film and a deep P type layer 5b is formed at the part of the thin oxide film. As is introduced and diffused through the same oxide film, and an N<+> type emitter diffused layer 6 is formed only on the part where the thin oxide film 4 is located. Thus the emitter width is reduced and hEP is not decreased. |
