| 摘要 |
PURPOSE:To obtain large-capacity, highly-integrated, high-reliability memories by making capacitors, piling up plate electrodes into a columnlike shape on both the upper and lower parts of MOS transistors. CONSTITUTION:An N-type diffusion layer 4 is formed by ion implantation with a poly-silicon gate (word line) 3, as a mask, provided through the medium of a gate oxide film 2 on a P-type conductivity semiconductor substrate 1. After that, second plates 6 made of conductors are piled up into a columnlike shape on the upper part of the poly-silicon gate 3 through the medium of a capacity insulating film 10. In addition, the first plate 5 made of a conductor is made so as to be kept contact with one side of the N-type diffusion layer 4 through the medium of the second plates 6 and capacity insulating film 10, and they make a capacitor. Accordingly, charges are stored on every side of the plate electrodes that store charges, and a wide area is not necessary. This makes it possible to obtain a large-capacity, highly-integrated and highly-reliable storage device. |
