| 摘要 |
PURPOSE:To perform rapidly a polishing of a semiconductor wafer, to facilitate the control of the amount of polishing and to inhibit small the irregularity of the thickness within the surface of the wafer by a method wherein the wafer which inclines to polish is bonded on the central part of the lower surface of a plate and thickness regulating members, whose surface layers consisting of a material of a polishing speed slower than that of the wafer, are arranged on the lower surface of the plate. CONSTITUTION:A semiconductor wafer 12 which inclines to polish is bonded on the central part of the lower surface of a glass plate 11 and at the same time, dummy wafers 15, whose surface layers consist of a material of a polishing speed slower than that of the wafer 12, are arranged on the periphery of the wafer 12 in the lower surface of the plate 11. For example, speaking in respect to the dummy wafers 15, whose parent materials consist of silicon and which have a thermal oxide film formed on their surface layers, the polishing speed of the wafers 15 is 1/200 or less of that of silicon according to the condition of polishing. |
