| 摘要 |
PURPOSE:To contrive improvement in preciseness of positioning of the pattern of a semiconductor device by a method wherein, after the asymmetrical region of the lower layer photoresist located in the vicinity of the target on the semiconductor substrate has been removed, an upper layer photoresist is coated, and a pattern is formed. CONSTITUTION:A target 12, which becomes the reference for positioning, is formed on the surface of a semiconductor substrate 11, and a lower layer photoresist 13 is coated thereon using a spin coating method and the like. An asymmetrical region 16 is generated on the lower layer photoresist located in the vicinity of the target 12. Said region 16 is exposed and removed by developing using a mask for exposure of a target region 17 only containing the asymmetrical region 16 of the lower layer photoresist. Then, the part of the lower layer photoresist 13, which is the part remained after removal of the target region 17, is prebaked, and an upper layer photoresist 18 is coated thereon. The dimensional difference between the target 12 and the target region 17 is not made larger than it is necessary in order to lessen the asymmetry of the upper photoresist. |
