| 摘要 |
PURPOSE:To control impedance across a pair of output electrodes by a method wherein a GaAs made regulating layer is added and an electron accumulation layer is formed in the vicinity of a hetero junction plane in a specified GaAs and AlGaAs made channel layer and a controlling electrode is used to regulate electron concentration. CONSTITUTION:On a semi-insulator GaAs substrate 1, an undoped GaAs channel 2, an n type AlxGa1-xAl (electron supplier) layer 3, a layer 4 wherein Al containing rate is decreased from 0.3 to 0, an n type GaAs (regulator) layer 5, are successively formed by the molecular beam epitaxial method, resulting in the formation of an electron accumulation layer 6 within a layer 2 in the vicinity of a hetero plane. Au-Ge electrodes 7 are selectively installed, changed into an alloy providing resistive junction regions 8 between the electrodes 7 and the layer 2, and are covered with an SiO2 film 9. A resist mask 10 is used to successively etch away the film 9 and the layer 5 for the formation of an Al gate electrode 11. This completes a constantly open type transistor with a high electron mobility, easy to manufacture. |
