| 摘要 |
PURPOSE:To prepare an oxide sintered product having an extremely low electric resistance and a high density by sintering zinc oxide including both an element having a specific atomic valency and a halogen element under a prescribed condition. CONSTITUTION:Zinc oxide including both an element having an atomic valency of positive >=3 and a halogen is sintered at a temperature of >=800 deg.C in a state wherein the concentration of oxygen in the sintering atmosphere is at least lower than that in air, thereby providing the objective oxide sintered product. The positive trivalent element employed as a dopant for imparting the electric conductivity includes Sc and Y of the group IIIA, B, Al, Ga, In and Tl of the group IIIB and Ti, Zr, Hr, Th, etc., of the group IVA. The effect of the addition of the above element is considered to be due to the substitution of the zinc with the elements to work as an n type dopant. The addition of the halogen element is effective for the substitution of -2 valent oxygen atom with -1 valent halogen element working as an n type dopant, thereby effective for the acceleration of the sintering property of the zinc oxide and for the lowering of the electric resistance of the sintered product. |
