| 摘要 |
<p>PURPOSE:To remove the oxygen contained in the gaseous hydride as impurities to a minimum concn. and to apply the gaseous hydride to the production of a semiconductor by bringing the gaseous hydride into contact with copper sulfide. CONSTITUTION:The gaseous hydride (AsH3, PH3, etc.) alone or the gaseous hydride diluted with an inert gas such as H2, N2 and Ar (contg. <=100ppm oxygen) is brought into contact with copper sulfide (e.g. Cu2S and CuS) catalyst deposited on a carrier to remove the contained oxygen. The empty cylinder linear velocity in the catalytic reaction is preferably controlled to <=30cm, the temp. to 0-100 deg.C and the pressure to 0.1-10kg/cm<2>G. The O2 content of the gaseous hydride is reduced to <=0.1ppm or further to <=0.01ppm by this method.</p> |
