| 摘要 |
PURPOSE:To improve the performance at low brightness by obtaining the correction for each storage operation in a form including factors of temperature and storage time and correcting a dark data accurately in response to the performance of each photoelectric conversion element. CONSTITUTION:A ratio of a picture element signal from light shield picture element sections 1a-1d of a photoelectric conversion element array 1 when light is made incident actually to a picture element signal from the light shield picture element sections 1a-1d when the light is shielded (at dark state) is obtained and a correction value of opening picture elements 1e-1p corrected based on the ratio and a dark data of the opening picture elements 1e-1p at dark state stored in advance in a nonvolatile memory 18 is obtained thereby applying correction of dark current component for each opening picture element. Thus, the dark data in response to the performance of each photoelectric conversion element is corrected accurately. Thus, the performance at low brightness is remarkably improved. |
