| 摘要 |
PURPOSE:To reduce dislocation density when a mixed crystal epitaxial layer having different lattice constant is grown on a compound semiconductor substrate, by interrupting the growth of the mixed crystal for a while, and growing a layer of uniform composition after a gradient composition layer whose composition ratio changes is formed on a substrate. CONSTITUTION:When a epitaxial layer of mixed crystal whose lattice constant is different from substrate crystal is vapor-grown on a semiconductor single crystal substrate 5, the growth of the mixed crystal is interrupted for a while after a gradient composition layer 52 whose composition ratio gradually changes is formed on the substrate 5, and then a constant composition layer 53 is grown. That is, by the growth interruption the dislocation generated in the gradient composition layer 52 can be restrained from vanishing or propagating to the growth layer thereon. Thereby dislocation density on the surface of the mixed crystal epitaxial layer 53 of constant composition can be reduced. |
