发明名称 |
Apparatus and method for compensating for errors in temperature measurement of semiconductor wafers during rapid thermal processing |
摘要 |
The present invention is an apparatus for calibrating a temperature feedback value in a water processing chamber to automatically compensate for variations in infrared emissions from a heated semiconductor wafer due to variations in composition and coatings from wafer to wafer. A calibration wafer with an imbedded thermocouple is used to generate a table relating actual wafer temperatures to power supplied to the heating chamber and infrared emissions detected by a pyrometer. A sample wafer of a batch to be processed is subsequently placed in the chamber at a known power level, and any difference between the detected infrared emission value and the value in the table is used to adjust the entire table according to a first predetermined formula or table. Before each wafer is processed, a known source of infrared light is reflected off the wafer and detected. The reflected light value is compared to a reflection measurement for the sample wafer. The difference in reflection measurements is correlated to emissions from heating, and the calibration table is fine-tuned with the correlation value according to a second predetermined formula or table to account for variations in emissions between individual wafers due to variances in wafer surface conditions.
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申请公布号 |
US4984902(A) |
申请公布日期 |
1991.01.15 |
申请号 |
US19900510357 |
申请日期 |
1990.04.17 |
申请人 |
PEAK SYSTEMS, INC. |
发明人 |
CROWLEY, JOHN L.;KERMANI, AHMAD;LASSIG, STEPHAN E.;JOHNSON, NOEL H.;RICKORDS, GARY R. |
分类号 |
G01J5/00;H01L21/00 |
主分类号 |
G01J5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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