发明名称 |
PRODUCTION DEVICE OF SILICON SINGLE CRYSTAL |
摘要 |
PURPOSE:To prevent the defects of crystal from being generated by pertitioning the crucible receiving molten Si raw material to inside of single crystal growing part and outside of raw material melting part to devide the Si raw material with the partitioning material consisting of opaque quartz glass. CONSTITUTION:Granular raw material 6 is supplied to the raw material melting part A from a raw material supply unit 5. The partitioning member 8 made of opaque quartz glass is coaxially provided in a quartz crucible 1 set in a graphite crucible 2. Small apertures 9 are provided in this partition member 8 so that the molten raw material 7 in the raw material melting part A flows into the single crystal growing part B through these apertures 9. The molten raw material 7 is grown into a pillar-shaped grown single crystal 4 to be pulled up. Thus, the single crystal free from fine defects is obtained. |
申请公布号 |
JPH035392(A) |
申请公布日期 |
1991.01.11 |
申请号 |
JP19890136448 |
申请日期 |
1989.05.30 |
申请人 |
NKK CORP |
发明人 |
SHIMA YOSHINOBU;OMURA MASAKI;OTANI AKIRA;ARAKI KENJI |
分类号 |
C30B15/00;C30B15/12;C30B29/06;H01L21/208 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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