| 摘要 |
PURPOSE: To improve reliability of a semiconductor device by growing an epitaxial layer at a part of contact, so that diffusion of a polycrystal silicon film's defect into an impurity dog area is prevented, relating to contact between the impurity doping area and the polycrystal silicon in a semiconductor substrate. CONSTITUTION: Relating to a PN junction diode comprising an N<+> type impurity doping area 2 at a P-type semiconductor substrate 1, a contact hole 4 formed at an insulation layer 3 between layers comprises an eptaxial layer 5, with the contact hole 4 positioned on a diffusion area 2. A contact layer 6 is formed on the upper part of the epitaxial layer 5. With this structure, diffusion of crystal defect of a polycrystal silicon film into the contact part of the doping area 2 is prevented by the epitaxial layer 5, thus occurrence of leakage current is prevented. |
