| 摘要 |
PURPOSE:To enable automatic mask alignment by making steep steps in a section acting as a buried layer formed in the surface of an Si substrate and steep transcribed steps appearing on the surface of an epitaxial layer formed thereon. CONSTITUTION:A process of forming steps A in a first conductivity type semiconductor 201 and then leaving Si3N4 205 only on said step parts, a process of forming an impurity diffusion region 210 in the first conductivity type semiconductor 201 and then making steep steps B in the impurity diffusion region 210 and a region acting as an aligned mark, and a process of growing a second conductivity type semiconductor and then making the steep steps 215 of the first conductivity type semiconductor transcribed to the surface 214 thereof are performed. The steep steps B in the surface of the first conductivity type semiconductor is thus transcribed to the surface 214 of the second conductivity type semiconductor when the second conductivity type semiconductor 214 is formed on the surface of the first conductivity type semiconductor, therefore, automatic mask alignment to the surface 214 of the second conductivity type semiconductor is possible. |
