| 摘要 |
<p>A high reliability, high density, non-volatile memory circuit (10) is disclosed. The circuit comprises a storage cell (19) which has a first MOS enhancement type transistor (12), a second MOS enhancement type transistor (14), a tunnel terminal device (26) and a capacitor (28). The first MOS enhancement type transistor (12) has a source (18), a drain (15) and a gate (16). The second MOS enhancement type transistor (14) has its drain (20) connected to the source (18) of the first MOS transistor (12). The tunnel device (26) has two terminals and has one of the terminals connected to the gate (22) of the second MOS transistor (14), and the other terminal connected to the source (24) of the second MOS transistor (14). A capacitor (28) is coupled to the gate (22) of the second MOS transistor (14). A third MOS transistor (30) of the depletion type is connected to the storage cell (19). The drain (32) of the third MOS transistor (30) is connected to the source (24) of the second MOS transistor (14). The memory circuit (10) can be used in a redundant mode for high reliability and can be densely manufactured on a semiconductive substrate (40).</p> |
