| 摘要 |
PURPOSE: To independently control both the optical and electronic characteristics of a semiconductor device, composed of semiconductor material sections containing three regions by using asymmetrical δ-doped arrangement in the device. CONSTITUTION: By utilizing an asymmetrically doped arrangement (namely, an arrangement such that the distances between at least one doped region, and adjacent regions having the opposite carrier type on both sides of the doped region are not equal to each other) the band structure shown in the figure is obtained. By changing the period of the paired adjacent areas by changing the distances between adjacent donor and acceptor δ-doped areas separated by an area having a low-carrier concentration of <10<17> /cm<3> or, preferably, <10<15> /cm<3> , both the electronic and optical characteristics of a semiconductor device are controlled. Namely, the interval between adjacent δ-doped regions controls angles 10 and 11 related to an electric field and, on the other hand, the δ-doping level controls the amplitude 9. |
