发明名称 Method of depositing diamond and diamond light emitting device.
摘要 <p>A method of depositing high quality diamond films and a light emitting device employing such films are described. The deposition is carried out in a reaction chamber. After disposing a substrate to be coated in the chamber, a carbon compound gas including a C-OH bond is introduced together with hydrogen. Then, deposition of diamond takes place in a magnetic field by inputting microwave energy. The present invention is particularly characterized in that the volume ratio of the carbon compound gas to hydrogen introduced into the reaction chamber is 0.4 to 2, the pressure in the reaction chamber is 0.01 to 3 Torr, the temperature of the substrate is kept between 200 to 1000 DEG C during deposition, and the input microwave energy is no lower than 2 KW. By virtue of this method, uniform and high quality diamond films can be formed.</p>
申请公布号 EP0402039(A1) 申请公布日期 1990.12.12
申请号 EP19900305919 申请日期 1990.05.31
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KADONO, MASAYA;YAMAZAKI, SHUNPEI
分类号 C23C16/27;H01L33/00;H01L33/34 主分类号 C23C16/27
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