A draft chamber is located within a clean room for sequentially immersing and processing carriers such as silicone wafers in a plurality of solution vessels provided in the draft chamber. In the draft chamber, a first air flow moves in a substantially horizontal direction from the front portion of the draft chamber toward the rear portion above the surfaces of solutions contained in chemical solution vessels which generate toxic gasses and a second air flow moves downward from the ceiling of the draft chamber. Thus, the toxic gasses generated from the chemical solution vessels are prevented from leaking into the clean room.
申请公布号
US4976815(A)
申请公布日期
1990.12.11
申请号
US19890426208
申请日期
1989.10.25
申请人
TADAHIRO, OHMI;HITACHI PLANT ENGINEERING & CONSTRUCTION CO., LTD.