MANUFACTURE OF DIELECTRIC ISOLATION TYPE SEMICONDUCTOR SUBSTRATE,申请号JP19890119507-传众专利搜索

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发明名称	MANUFACTURE OF DIELECTRIC ISOLATION TYPE SEMICONDUCTOR SUBSTRATE
摘要
申请公布号	JPH02298047(A)	申请公布日期	1990.12.10
申请号	JP19890119507	申请日期	1989.05.12
申请人	TOSHIBA CORP	发明人	FURUKAWA KAZUYOSHI;NAKAGAWA AKIO;OGURA TSUNEO
分类号	H01L21/762;H01L21/76	主分类号	H01L21/762
代理机构		代理人
主权项
地址

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