发明名称 POSITIVE TYPE PHOTORESIST DEVELOPER
摘要 PURPOSE:To form fine patterns with good accuracy by adding hydrazine and nonionic surfactant to an aq. quaternary ammonium hydroxide soln. which is an aq. org. alkaline soln. CONSTITUTION:The aq. soln. of the quaternary ammonium hydroxide expressed by formula I is used as the principal material and the hydrazine and nonionic surfactant are incorporated therein. In the formula I, R1 to R4 may be the same or different and denote 1 to 10C alkyl group or aryl group. The rate of a decrease in the film thickness of an unexposed part is sufficiently suppressed in this way and the formation of the fine patterns with the high resolution is possible and the excellent profiles which are small in the fluctuation in pattern size are obtd. In addition, the effect of not allowing scum to be admitted is obtd.
申请公布号 JPH02297556(A) 申请公布日期 1990.12.10
申请号 JP19880264090 申请日期 1988.10.21
申请人 MITSUBISHI GAS CHEM CO INC 发明人 AOYAMA TETSUO;KANEKO SUSUMU
分类号 G03F7/022;G03F7/32 主分类号 G03F7/022
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