| 摘要 |
PURPOSE:To form resist patterns having good sectional shapes with good dimensional controllability and high accuracy by subjecting the surface of a photoresist film to a sillylation treatment so that the film is made hardly soluble in an aq. alkaline soln. as a developer. CONSTITUTION:After a proper amt. of a sillating agent 13 is applied on the photoresist film 12, the film is loaded into a vacuum oven 14 and is subjected to the sillylation treatment. The photoresist film 12 is in succession irradiated by the light and exposed via a mask 16 formed with prescribed circuit patterns, then (processed on a hat plate 18, developed and rinsed by water to remove the unexposed part 19 of the photoresist film 12 and to dissolve away the exposed part 20 solubilized by irradiation light 17. The resist patterns 21 having the desired sectional shapes are formed. The surface part of the photoresist film 12 subjected to the sillylation treatment in such a manner is made hardly soluble in the aq. alkaline soln. as the developer, by which the rate of the dissolution in the aq. alkaline soln. is lowered and the thinning of the film is lessened. The resist patterns 21 consisting of the good sectional shapes having the rectangular shape are formed. |
