| 摘要 |
PURPOSE:To obtain a Schottky barrier diode which eliminates a reduction in a Schottky junction area, which prevents an increase in a current density, whose voltage drop is small and whose forward surge-resistant amount is large by a method wherein a recognition mark composed of an insulator is formed on a Schottky barrier metal layer or an electrode metal layer. CONSTITUTION:A Schottky barrier metal layer 5 which forms a Schottky junction is formed by a sputtering method, a vacuum vapor-deposition method or the like. Recognition marks 4a to 4d composed of an insulator are formed on the Schottky barrier metal layer 5 by using a low-melting glass, a coating liquid used to form an SiO2 film or a polyimide-based photosensitive heat- resistant coating material and by executing an annealing operation at 400 deg.C or lower. Then, an electrode metal layer 6 is applied; the electrode metal layer on the recognition marks 4a to 4d is removed. Thereby, the recognition marks 4a to 4d can be formed without reducing a Schottky junction area; it is possible to prevent an increase in a forward current density and a voltage drop thereby. |
