Method of producing carbon-doped amorphous silicon thin film

摘要

A method of producing a carbon-doped amorphous silicon thin film upon a substrate comprising the steps of growing a carbon-doped amorphous silicon layer by plasma assisted chemical vapor deposition, including generating a glow discharge in a gaseous mixture of a silane gas and a hydrocarbon gas, and exposing said carbon-doped amorphous silicon layer to a plasma in a gas containing hydrogen to achieve a resultant layer having a prescribed value of photoconductivity.