发明名称 FORMING METHOD OF PHOTO-RESIST PATTERN
摘要 PURPOSE:To form fine resist patterns by exposing a positive type resist plural times by different patterns in the quantity of exposure not removed completely after developing and perfectly taking off the resist only in a section, in which all patterns are superposed, after developing. CONSTITUTION:A plurality of patterns 1, 2 in which a section 3, in which a plurality of patterns coincide, is brought to a pattern, in which a resist must be opened, are prepared, and each pattern is exposed discretely in the quantity of exposure in which a resist is not removed completely. Each pattern 1, 2 can be formed in patterns larger than the pattern to be opened and easy to be resolved. Since the total quantity of exposure of the section 3 in which all patterns are superposed is made larger than other sections 1, 2, only the section 3 in which all patterns are superposed can be opened selectively after developing by choosing energy at the time of separate exposure. Accordingly, fine patterns exceeding the resolution of an exposure machine can be formed accurately.
申请公布号 JPH02266510(A) 申请公布日期 1990.10.31
申请号 JP19890086731 申请日期 1989.04.07
申请人 MATSUSHITA ELECTRON CORP 发明人 OKUDA YOSHIMITSU
分类号 G03F7/20;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
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