| 摘要 |
PURPOSE:To form the section after etching to a steeper shape so that finer patterns can be formed by respectively specifying the fluorine concns. in a light shielding layer and antireflecting layer. CONSTITUTION:This photomask blank is formed by laminating the light shielding layer (A) contg. Cr, N, C and F and the antireflecting layer (B) contg. Cr, O, N, C and F on a transparent substrate, such as molten quartz substrate. The element concn. of the F is specified within a 1 to 5wt.% range in the layer A and a 10 to 20wt.% range in the layer B. The layer A may also be formed into the two-layered structure consisting of a film consisting of Cr and N and a film consisting of Cr, N, C and F on this film. |
