发明名称 CHIP TYPE SOLID ELECTROLYTIC CAPACITOR AND MANUFACTURE THEREOF
摘要 PURPOSE:To inhibit an increase in a leakage current due to the migration of silver in a moisture-containing atmosphere by a method wherein anode and cathode terminals are formed not by use of a conductive paste but by direct formation of a plated-layer and a solder layer on a layer on a surface which forms the terminals. CONSTITUTION:Alumina powder of a mean particle diameter of about 40 to 50mum is sprayed on the surface of an anode lead 2, a lead 2 implanted surface, which inclines to form an anode terminal 14, and the surface of an insulating resin layer 8 on part of the side surfaces of an element and the surfaces are roughened. After that, a sponge impregnated with a butyl acetate solution consisting of an ashing compound of palladium is brought into contact with the roughened surfaces, whereby after being applied on the surfaces, the sponge is thermally decomposed in an atmosphere of 180 to 200 deg.C and palladium powder is adhered. Then, an electroless plating is performed, an element plated layer 11 is formed and moreover, a solder layer 12 is formed thereon to form a the terminal 14. Thereby, as a silver paste is not used for a conductive paste to be used as a base layer of the electroless plated layer, an increase in a leakage current due to the migration of silver in a moisture-containing atmosphere can be prevented.
申请公布号 JPH02263424(A) 申请公布日期 1990.10.26
申请号 JP19890326888 申请日期 1989.12.15
申请人 NEC CORP 发明人 KOBAYASHI ATSUSHI
分类号 H01G9/012;H01G2/06;H01G9/00;H01G9/004;(IPC1-7):H01G9/05 主分类号 H01G9/012
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